Paper Award

A few papers will be selected for the “Paper Award” for young researcher. Around 10 papers will be nominated for the award based on the program committee’s ratings of the abstracts. The paper award will be judged from their presentations and announced at the closing to be held on the last day.

Student’s Paper Award, “Yamaguchi Masahito Award”

Yamaguchi Masahito, Ph. D, Associate Professor, Nagoya University, Steering Committee Member of LEDIA’13. He passed away in July, 2013, at the age of 45. We inherited his will to educate students and established Student’s Paper Award with the financial aid of MUTSUMI CORPORATION.

Paper Award of LEDIA’18

Young Researcher’s Paper Award

Johannes Glaab, Ferdinand-Braun-Institut (Germany)

Degradation of electro-optical parameters and electromigration of hydrogen in (In)AlGaN-based UVB LEDs

Co-authors: J. Ruschel¹, T. Kolbe¹, A. Knauer¹, J. Rass¹, N. L. Ploch¹, M. Weyers¹, M. Kneissl^1,2, S. Einfeldt¹
¹Ferdinand-Braun-Institut, Germany, ²Technische Univ. Berlin, Germany

Student’s Paper Award, “Yamaguchi Masahito Award”

Yuya Inatomi, Kyushu University (Japan)

Formation mechanism of singular structure in AlInN layer grown on m-GaN substrate by MOVPE

Co-authors: A. Kusaba¹, Y. Kangawa^1,2,3, K. Kojima⁴, S. F. Chichibu^4,3
¹Dept. Aeronautics and Astronautics, Kyushu Univ., Japan, ²RIAM, Kyushu Univ., Japan, ³IMaSS, Nagoya Univ., Japan, ⁴IMRAM, Tohoku Univ., Japan

So Kusumoto, Osaka University (Japan)

GaAsP Tunable Single-Mode Semiconductor Laser using Periodically Slotted Structure with Simplified Fabrication Process

Co-authors: M. Uemukai, R. Katayama
Osaka Univ., Japan

Paper Award of LEDIA’17

Young Researcher’s Paper Award

Narihito Okada, Yamaguchi University (Japan)

Fabrication of idiosyncratic GaN structures by ICP-RIE with enhanced chemical etching conditions and its applications

Co-authors: K. Nojima¹, N. Ishibashi¹, K. Nagatoshi¹, N. Itagaki¹, R. Inomoto¹, S. Motoyama², T. Kobayashi², K. Tadatomo¹
¹Yamaguchi Univ., Japan, ²SAMCO Inc., Japan

Student’s Paper Award, “Yamaguchi Masahito Award”

Marcus Muller, Otto-von-Guericke-University Magdeburg (Germany)

Nano-scale correlation of the optical, structural, and compositional properties of InGaN/GaN core-shell nanorod LEDs

Co-authors: S. Metzner¹, P. Veit¹, F. Krause², F. Bertram¹, T. Schimpke³, A. Avramescu³, M. Strassburg³, A. Rosenaer², J. Christen¹
¹Otto-von-Guericke-Univ. Magdeburg, Germany, ²Univ. Bremen, Germany, ³OSRAM Opto Semiconductors GmbH, Germany

Naoki Takeda, Osaka University (Japan)

Effect of gaseous carbon addition in GaN crystal growth by Na-flux method

Co-authors: M. Imanishi, K. Murakami, M. Hayashi, M. Imade, M. Yoshimura, Y. Mori
Osaka Univ., Japan

Paper Award of LEDIA’16

Young Researcher’s Paper Award

S.-Y. Bae, Nagoya University (Japan)

Controlled Growth of Highly Elongated GaN Nanorod Arrays on AlN/Si Templates by Pulsed-Mode Metalorganic Vapor Deposition

Co-authors: K. Lekhal^1,2, B. O. Jung¹, D.-S. Lee³, M. Deki², Y. Honda², H. Amano^2,4
¹Dept. of Electrical Eng. and Computer Sci., Nagoya University, Japan, ²Inst. of Materials and Systems for Sustainability, Nagoya University, Japan, ³Gwangju Inst. of Sci. and Tech., Korea, ⁴Akasaki Research Center, Nagoya Univ., Japan

C. Reich, Technical Univ. Berlin (Germany)

Strongly TE-Polarized Emission from Deep UV AlGaN Quantum Well LEDs

Co-authors: M. Feneberg², M. Guttmann¹, T. Wernicke¹, F. Mehnke¹, M. Kneissl¹
¹Technical Univ. Berlin, Germany, ²Otto-von-Guericke-Univ. Magdeburg, Germany

Student’s Paper Award, “Yamaguchi Masahito Award”

K. Matsui, Meijo University (Japan)

GaN-based VCSELs using Periodic Gain Structures

Co-authors: K. Ikeyama¹, T. Furuta¹, Y. Kozuka¹, T. Akagi¹, T. Takeuchi¹, S. Kamiyama¹, M. Iwaya¹, I. Akasaki^1,2
¹Meijo Univ., Japan, ²Akasaki Research Center, Nagoya Univ., Japan

S. Stanczyk, Institute of High Pressure Physics, PAS (Poland)

Opto-electrical Properties of Tapered (Al,In)GaN Laser Diodes

Co-authors: A. Kafar¹, A. Nowakowska-Siwinska², I. Makarowa², M. Sarzynski^1,2, J. Walczak³, R. Sarzala³, T. Suski¹, P. Perlin^1,2
¹IHPP, PAS, Poland, ²TopGaN Ltd., Poland, ³Inst. of Physics, Lodz Univ. of Tech., Poland

Paper Award of LEDIA’15

Young Researcher’s Paper Award

Tomasz Sochacki, Institute of High Pressure Physics, PAS (Poland)

State of the Art of Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds

Co-authors: M. Amilusik^1,2, M. Fijalkowski¹, B. Lucznik^1,2, M. Iwinska¹, G. Kamler¹, R. Kucharski³, I. Grzegory¹, M. Bockowski^1,2
¹IHPP, PAS, Poland, ²TopGaN Sp. z o.o., Poland, ³Ammono, Poland

Student’s Paper Award, “Yamaguchi Masahito Award”

Malgorzata Iwinska, Institute of High Pressure Physics, PAS (Poland)

HVPE-GaN Growth on GaN-Based Advanced Substrate by Smart Cut^TM

Co-authors: M. Amilusik^1,2, M. Fijalkowski¹, T. Sochacki^1,2, B. Lucznik^1,2, P. Guenard³, R. Caulmilone³, A. Nowakowska-Siwinska², I. Grzegory¹, M. Bockowski^1,2
¹IHPP, PAS, Poland, ²TopGaN Sp. z o.o., Poland, ³Soitec, France

Kanako Shojiki, Tohoku University (Japan)

Influence of V/III Ratio and Layer Thicknesses on MOVPE-Grown N-Polar (000-1) InGaN Multiple Quantum Wells

Co-authors: J. H. Choi¹, T. Tanikawa^1,2, S. Kuboya¹, T. Hanada^1,2, R. Katayama¹, T. Matsuoka^1,2
¹Tohoku Univ., Japan, ²CREST, JST, Japan

Paper Award of LEDIA’14

Young Researcher’s Paper Award

Ryan G. Banal, NTT Corporation (Japan)

Nonpolar M-Plane AlGaN Deep-UV LEDs

Co-authors: Y. Taniyasu, H. Yamamoto
NTT Corp., Japan

Tomoyuki Tanikawa, Tohoku University (Japan)

Realization of p-Type Conduction in Mg-Doped N-Polar (000-1) GaN Grown by Metalorganic Vapor Phase Epitaxy

Co-authors: J. H. Choi^1,2, K. Shojiki¹, S. Kuboya¹, R. Katayama^1,2, T. Matsuoka^1,2
¹Tohoku Univ., Japan, ²CREST, JST, Japan

Student’s Paper Award, “Yamaguchi Masahito Award”

Anna Kafar, Institute of High Pressure Physics, PAS (Poland)

Optimization of InGaN Superluminescent Diodes: State of the Art Devices and an Analysis of Their Limiting Factors

Co-authors: S. Stanczyk¹, G. Targowski^2,3, P. Wisniewski¹, T. Suski¹, U.T. Schwarz⁴, P. Perlin¹
¹IHPP, PAS, Poland, ²TopGAN Sp. Z o.o, Polnad, ³Fraunhofer Institute for Applied Solid State Physics IAF, Germany, ⁴Freiburg Univ., Germany

Tadashi Mitsunari, Nagoya University (Japan)

Growth Optimization of Green InGaN Multi-Quantum Well on Bulk GaN Substrate by In Situ Monitoring System

Co-authors: A. Tamura¹, S. Usami¹, M. Kushimoto¹, K. Yamashita¹, Y. Honda¹, Y. Lacronix³, H. Amano^1,2
¹Nagoya Univ., Japan, ²Akasaki Research Center, Nagoya Univ., Japan, ³YSystems Ltd., Japan