Program

>> LEDIA’18 Advance Program. [Download] (2018.03.29 Updated.)

The 6th International Conference on Light-Emitting Devices and Their Industrial Applications 2018(LEDIA2018)

Program

April 25 Wed.

IOT-LDC-LEDIA:
Joint Session (LEDIA, LDC, and IoT-SNAP)
Chairs: Atsushi Kanno(National Institute of Information and Communications Technology, Japan)
Sunao Kurimura(Natinal Institute of Material Science, Japan)
Ryuji Katayama(Osaka University, Japan)

Room 301

Start	End	Session No.	Title	Speaker	Description
13:30	13:45		Opening talk	Hiroshi Murata¹, Kenichi Kitayama², Ryuji Katayama¹ ¹Osaka University, Japan, ²The Graduate School for the Creation of New Photonics Industries, Japan
13:45	14:15	IOT-LDC-LEDIA-1 Invited	Towards the Augmented Internet of Things	Huei Ee Yap LP-Research Inc., Japan	The purpose of the ARcore platform is to provide a customer with a complete system integration to create his own high-performance AR product based on the ARcore.
14:15	14:45	IOT-LDC-LEDIA-2 Invited	Fiber-optic-based Life Cycle Monitoring of Aerospace Composite Structures: Toward Digitalization of Next Generation Aircraft	Shu Minakuchi, Nobuo Takeda University of Tokyo, Japan	This talk will overview our recent activity of composite life cycle monitoring by embedded fiber-optic sensors. Detailed information obtained from composite structures can be utilized to build the digital replicas and to predict their performance.
14:45	15:15	IOT-LDC-LEDIA-3 Invited	Laser Diode Based Underwater Optical Wireless Communication	Takao Sawa¹, Koji Tojo², Naoki Nishimura², Shin Ito³ ¹JAMSTEC, Japan, ²Shimadzu Corp., Japan, ³SAS Co., Ltd., Japan	We developed an underwater optical wireless communication modem using high power laser diode. 20 Mbps communication speed at 120 m distance, and 32 kbps at 190 m distance were established through underwater tests.
15:15	15:45	break
15:45	16:15	IOT-LDC-LEDIA-4 Invited	Recent Progress of Retinal Imaging Laser Technology	Mitsuru Sugawara QD Laser, Japan
16:15	16:45	IOT-LDC-LEDIA-5 Invited	III-nitride Semiconductor Light Emitting Transistors	Kazuhide Kumakura, Junichi Nishinaka, Hideki Yamamoto NTT Basic Research Laboratories, NTT Corporation, Japan	Light-emitting transistors, which are based on heterojunction bipolar transistors, can output both electric and optical signals with high-frequency modulation. We discuss their potential for optical communication and optoelectronic device applications.
16:45	17:15	IOT-LDC-LEDIA-6 Invited	High Photosensitivity HFET-type Nitride Based Photosensors	Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^{^{1, 2}} ¹Meijo University, Japan, ²Nagoya University, Japan	In this presentation, we introduce a GaN-based heterostructure field effect transistor type photosensor featuring high photosensitivity and rejection ratio. These photosensors have many applications such as flame sensor, visible light communication etc.

April 26 Thu.

LEDIA1: LEDIA1
Chairs: Jeehee Cho(Chonbuk National University, Korea)
Hoi Wai Choi(The University of Hong Kong, Hong Kong)

Room 411+412

Start	End	Session No.	Title	Speaker	Description
9:00	9:30	LEDIA1-1Invited	Development of Advanced Hybrid GaN-based Tunnel Junction LEDs	James S. Speck University of California, Santa Barbara, USA	In this presentation, we present UCSB work on the develop of hybrid MBE/MOCVD tunnel junction LEDs. The tunnel junctions are grown directly on MOCVD LED layers which are terminated with a heavily doped layer. We review cleaning procedures prior to the NH₃ (ammonia) MBE.
9:30	9:45	LEDIA1-2	Characterization of AlGaN-Based Tunnel Junction Ultraviolet Light Emitting Diodes	Yusuke Goto, Hisanori kojima, Kazuyoshi Iida, Myunghee KIM, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki Meijo University, Japan	We demonstrated AlGaN-based tunnel junction (TJ) ultraviolet light emitting diodes (UV-LEDs) fabricated on high-quality n-Al0.62Ga0.38N templates using MOVPE. A TJ UV LEDs emitting at 310 nm under 40mA driving current was obtained.
9:45	10:00	LEDIA1-3	Electroluminescence Enhancement for Near-Ultraviolet Light Emitting Diodes with Graphene/AZO-Based Current Spreading Layers	Li Lin¹, Yiyu Ou¹, Xiaolong Zhu², Berit Herstroem³, Flemming Jensen³, Haiyan Ou¹ ¹Department of Photonics Engineering, Technical University of Denmark, Denmark, ²Department of Micro- and Nanotechnology, Technical University of Denmark, Denmark, ³DTU Danchip, Technical University of Denmark, Denmark	Near-ultraviolet light emitting diodes with different aluminum-doped zinc oxide-based current spreading layers were fabricated and electroluminescence (EL) was compared. A 170% EL enhancement was achieved by using a graphene-based interlayer.
10:00	10:15	LEDIA1-4	Optical and Device Characteristics of InGaN/GaN Light Emitting Diodes with Multilayer Graphene as Transparent and Current Spreading Electrodes	Ying-Hsiang Wang¹, Wei-Ming Lee¹, Shih-Wei Feng¹, Hsiang-Chen Wang² ¹Department of Applied Physics, National University of Kaohsiung, Taiwan, Taiwan, ²Graduate Institute of Opto-Mechatronics, National Chung Cheng University, Taiwan, Taiwan	We demonstrated InGaN-based LEDs with graphene transparent conductive electrodes. The shorter response, rise, delay, and recombination times of the InGaN-based LEDs with graphene transparent conductive electrodes provide more efficient carrier injection, transport, relaxation, and recombination.
10:15	10:30	LEDIA1-5	Gan Metal–Semiconductor–Metal Ultraviolet Photodetector with a Reduced-Graphene Oxide Schottky Contact	Bhishma Pandit, Jaehee Cho Chonbuk National University, Korea	GaN and its ternary compound with AlN have drawn much attention for the high speed and high responsivity ultraviolet (UV) photodetectors (PDs) because of their direct and wide energy bandgap, robustness and high radiation hardness.
10:30	10:45	Break

LEDIAp2: Short Presentation
Chair: Hisashi Murakami(Tokyo University of Agriculture and Technology, Japan)

Start	End	Session No.	Title	Speaker	Description
10:45	11:42		Short Presentation
11:42	13:00	Lunch Break

LEDIAp2: Poster Session

Exhibition Hall A

Start	End	Session No.	Title	Speaker	Description
13:00	14:30	LEDIAp2-1	Algan-Based Deep UV Flip-Chip Light Emitting Diode with AlN/Al Reflector	Tae Hoon Park, Tae Ho Lee, Tae Geun Kim Korea University, Korea	AlGaN-based deep ultraviolet flip-chip light-emitting diodes using AlN/Al electrodes were studied, which shows the outstanding Ohmic behavior for both n- and p-AlGaN layers and high reflectance.
		LEDIAp2-2	The Effect of the Metallic Nano-Grating for 365nm Polarized UV-LED	Eun-Kyung Chu¹, Nam-Woo Kang¹, Beom-Rae Noh¹, Hee-Jung Choi¹, Kwon Yung-Ju², Kyoung-Kook Kim¹ ¹Dept. of Advanced Convergence Technology, Korea, ²Dept. of Nano Optical Engineering, Korea	The aluminum based metal nano-grating with a period of 100nm is fabricated on the sapphire substrate of the flip-chip by e-beam evaporator and inductively coupled plasma etching for 365nm polarized UV-LED.
		LEDIAp2-3	Wide Band Gap Transparent Conductive Oxides of Oxide/Metal/Oxide Triple-Layer Structure based on Fluorine Tin Oxide	Si-Won Kim¹, Gyu-Jae Yohn¹, Soae Jeong¹, Beom-Rae Noh¹, So-Yeon Park², Suyeon Son², Kyoung-Kook Kim¹ ¹Convergence Technology, Korea Polytechnic University, Korea, ²Dept. of Nano Optical Engineering, Korea Polytechnic University, Korea	For wide bandgap TCOs, we fabricated OMO structure using FTO and Ag nano-layer. This TCO shows the lower resistivity of 6.43 x 10^-4 Ωcm and the average optical transmittance of about 84% in deep UV
		LEDIAp2-4	Efficient Blue Micro-Light-Emitting Diodes Using SiOx-Based Glass Electrode	Kyung Rock Son, Byeong Ryong Lee, Tae Ho Lee, Sang Hoon Oh School of electrical Engineering, Korea University, Korea	The SiOx-based glass electrode that has a high transmittance and even a current path was applied as a transparent conducting electrode (TCE) of micro-light-emitting diodes to overcome their saturated efficiency, instead of conventional TCE material,
		LEDIAp2-5	Self-Standing ZnO Nanotube/SiO₂ Core?Shell Arrays for High Photon Extraction Efficiency in III-Nitride Emitter	Hee-Jung Choi¹, Semi Oh², Soo-Hyun Kang¹, Kab Ha¹, Eun-Kyung Chu¹, Won-Seok Lee³, Soon-Hwan Kwon³, Kyoung-Kook Kim¹ ¹Dept. of Advanced convergence Technology, Korea, ²Dept. of Materials Science & Technology (GIST), Korea, ³Dept. of Nano Optical Engineering, Korea	Self-standing ZnO nanotubes arrays were fabricated on the surface of a GaN-based emitter with an indium tin oxide (ITO) transparent layer using a hydrothermal method and temperature cooling down process.
		LEDIAp2-6	Improved Light Extraction Efficiency of GaN-Based Near Ultraviolet Light-Emitting Diodes Using TiO₂/HfO₂ DBR Electrode with Conductive Filaments	Sanghoon Oh, Kyung Rock Son, Tae Geun Kim School of Electrical Engineering, korea university, Korea	We have reported a distributed Bragg reflector, having high reflectance, based p-type electrodes to reflect light absorbed by p-electrodes made of metal from ultraviolet micro-light emitting diodes emitting at 385 nm to improve light extraction.
		LEDIAp2-7	Thermal Annealing Effect of Ti Buffer Layer for the Growth of GAN Film	Tzu-Ting Lin, Shih-Hao Chan, Shao-Ze Tseng, Sheng-Hui Chen National Central University, Taiwan	Ti buffer layers were fabricated and annealed with various temperatures to achieve good crystalline properties in (002) on Si wafer. Then GaN thin films can be deposited on the Ti buffer layer with good crystallization.
		LEDIAp2-8	Characterizations and Growth of ZnO: B Films Grown by Low-Pressure Chemical Vapor Deposition on Glass Substrates	Wei-Ming Lee¹, Ying-Hsiang Wang¹, Chin-Yi Tsai¹, Shih-Wei Feng¹, Chien-Hsun Chen², Hsiang-Chen Wang³, Li-Wei Tu⁴ ¹Department of Applied Physics, National University of Kaohsiung, Kaohsiung, Taiwan, Taiwan, ²Green Energy and Environment Research Labs, Industrial Technology Research Institute, Hsinchu, Taiwan, Taiwan, ³Graduate Institute of Opto-Mechatronics, National Chung Cheng University, Taiwan, Taiwan, ⁴Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung, Taiwan, Taiwan	The results of this work provide information for the LPCVD growth of ZnO films grown on glass substrates that could be potentially utilized for high-performance and low-cost transparent conductive oxides and their associated applications.
		LEDIAp2-9	A study on p-type Conductivity of Phosphorus-doped ZnO Thin Film using RF Sputtering and Annealing	So-Yeon Park¹, Si-Won Kim², Gyu-Jae Yohn², Hee-Jung Choi², Yebin Im¹, Kyoung-Kook Kim² ¹Dept. of Nano Optical Engineering, Korea, ²Dept. of Advanced convergence Technology, Korea	we have tried to grow phosphorus dopes ZnO using RF sputtering and to use annealing. The p-type ZnO grown on sapphire substrate shows the electrical properties of concentration of 10^17/cm³ with mobility of 1.2 cm²/Vs.
		LEDIAp2-10	Photoluminescence Investigation of Near White Light-Emitting Zinc Stannate-Based Phosphors	Mu-Tsun Tsai, Chih-Chuan Chan, Chien-Hung Lin National Formosa University, Taiwan	We experimentally investigate the near white light emission of Zn₂SnO₄ (ZTO)-based powders via a sol-gel process. The photoluminescence (PL) mechanism was discussed. Significant enhancement in PL intensity was demonstrated for the ZnO-rich ZTO phosphors.
		LEDIAp2-11	Highly Efficient Photonic Conversion Mediums Based on Polymer Complexes for Applications in Light Emitting Devices	Petronela Horlescu, Corneliu S. Stan, Simona E. Bacaita “Gheorghe Asachi” Technical University of Iasi/ Faculty of Chemical Engineering and Environmental Protection, Romania	New polymer complexes with impressive luminescent properties were prepared and investigated. Their facile preparation path both in bulk and thin films recommend them as photonic conversion mediums in light emitting devices.
		LEDIAp2-12	Numerical and Experimental Investigations for Deposited Nanosilver Tracks on Polyimide Films with Heterostructures	Chia-Yen Chan¹, Kuan-Cheng Shih², Yu-Hsin Lin¹ ¹Instrument Technology Research Center, National Applied Research Laboratories, Taiwan, ²Kingley Rubber Industrial Co., Ltd., Taiwan	Numerical computations and experimental measurements have been complimentarily performed to study the nanosilver solution ejected from a drop-on-demand piezoelectric inkjet printhead and the characteristics of the deposited nanosilver tracks on the Polyimide substrates with heterostructures.
		LEDIAp2-13	Effect of the Oxygen Concentration on Electrical Properties of GaN Crystals Grown with the Na-flux Point Seed Method	K. Endo, T. Yamada, H. Kubo, K. Murakami, M. Imanishi, M. Yoshimura, Y. Mori Osaka University, Japan	We investigated electrical properties of a GaN crystal grown with {10“1” 1} plane in the Na-flux point seed method. The resistivity was 8.9×10^-4 Ω cm, which was much lower than that of crystals with (0001) plane.
		LEDIAp2-14	The Effect Of Nitrogen Pressure On Threading Dislocation Density During The Na-flux GaN Growth Using Point Seed Technique	Yuki Sawada, Takumi Yamada, Kosuke Murakami, Keisuke Kakinouchi, Kosuke Nakamura, Kanako Okumura, Tomoko Kitamura, Yasuhiro Unoki, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori Osaka University, Japan	We investigated the relationship between dislocation density and nitrogen pressure. Dislocation density reduced with reduction of nitrogen pressure, reaching the order of 104 /cm² with 3.0-MPa pressure due to c-plane shrinking during growth.
		LEDIAp2-15	Reduction of Li Impurity in the Freestanding Gan Substrate Fabricated Using the Sapphire Dissolution Technique in the Na-Flux Growth	Takumi Yamada, Masayuki Imanishi, Kosuke Murakami, Kosuke Nakamura, Mamoru Imade, Masashi Yoshimura, Yusuke Mori Osaka University, Japan	In Na-flux sapphire dissolution technique for fabricating freestanding GaN substrates, incorporation of Li impurity in crystals can’t be avoided. For reduction of Li impurity, GaN crystals were regrown on GaN substrates obtained by the technique.
		LEDIAp2-16	Sol-Gel-Derived Hole-Transporting NiOx Films for Perovskite CsPbBr3 Green Light-Emitting Diodes	Chun-Yuan Huang¹, Shyh-Jer Huang², Yi-Hsiu Hsieh¹ ¹Nation Taitung University, Taiwan, ²National Cheng Kung University, Taiwan	A novel perovskite light-emitting diodes (PeLED) with nickel oxide for efficient hole transport. Via adequately adjusting the thickness of NiOx, low turn-on voltage of 3.4 V and high luminance of 1200 cd/m² can be achieved.
		LEDIAp2-17	Optically Readable GaN-based Micro-LEDs Using NiO-based ReRAM as an N-Type Contact Layer for Micro-LED Display	Byeong Ryong Lee, Ju Hyun Park, Hyun Tae Kim, Kyung Rock Son, Tae Geun Kim Korea university, Korea	New driving technology of micro-light-emitting-diodes (μLEDs) display by combining resistive random access memory (RRAM) with lateral LED have been developed. Excellent unipolar RRAM behavior and superior μLED performance were shown.
		LEDIAp2-18	Optical and Device Characteristics of InGaN/GaN Light Emitting Diodes with Multilayer Graphene as Transparent and Current Spreading Electrodes	Ying-Hsiang Wang¹, Wei-Ming Lee¹, Shih-Wei Feng¹, Hsiang-Chen Wang² ¹Department of Applied Physics, National University of Kaohsiung, Taiwan, Taiwan, ²Graduate Institute of Opto-Mechatronics, National Chung Cheng University, Taiwan, Taiwan	We demonstrated InGaN-based LEDs with graphene transparent conductive electrodes. The shorter response, rise, delay, and recombination times of the InGaN-based LEDs with graphene transparent conductive electrodes provide more efficient carrier injection, transport, relaxation, and recombination.
		LEDIAp2-19	High Efficiency UV-Emitters with Micro-Hole Pattern and ITO Nanoparticles	Beom-Rae Noh¹, Joon-Sung Kwon¹, Nam-Woo Kang¹, Eun-Kyung Chu¹, Si-Won Kim¹, Kwang-Gyun Im², Kyoung-Kook Kim¹ ¹Dept. of Advanced Convergence Technology, Korea, ²Dept. of Nano Optical Engineering, Korea	In UV-emitter, the pitch of the micro-hole is 25 micrometers with the etching depth of 75 nm, and the diameter of micro-hole was fabricated to 4, 6, 8, and 10um by photolithography and ICP-RIE processing.

LEDIA3: Novel Application & Materials
Chairs: Ryuji Katayama(Osaka University, Japan)
Je Won Kim(Namseoul University, Korea)

Room 411+412

Start	End	Session No.	Title	Speaker	Description
14:30	15:00	LEDIA3-1Invited	LED Technology for Dental Applications	Paul Michael Petersen Technical University of Denmark, Denmark	LEDs have a large potential in many dental and oral applications. Areas such as photo polymerization, fluorescence imaging, photodynamic therapy, and photoactivated disinfection are important future candidates for LED based diagnostics and treatment in dentistry.
15:00	15:15	LEDIA3-2	Organosilicon-Functionalized Carbon Dots Based White LED	Yunfeng Wang¹, Zhengmao Yin³, Chuanjian Zhou², Zheng Xie¹, Shuyun Zhou¹ ¹The HongKong Polytechnic University, China, ²The HongKong Polytechnic University, China, ³College of Materials Science and Engineering, Qingdao University of Science and Techlogy, China	Organisilicon functionalized carbon dots can be used as optical conversion materials in the application of dichromatic and trichromatic White LED which can meet high requirement for lighting and display.
15:15	15:30	LEDIA3-3	Solution Processed All Inorganic Quantum Dots Light Emitting Diodes with UV Ozone Treatment	Hsin-Chieh Yu^{1, 2}, Yiyang Shen², Hoang-Tuan Vu², Chih-Chiang Yang², Chun-Yuan Huang³ ¹Institute of Lighting and Energy Photonics, College of Photonics, National Chiao Tung University, Taiwan, ²Advanced Optoelectronic Technology Center, National Cheng Kung University, Taiwan, ³Department of Applied Science, National Taitung University, Taiwan	All inorganic quantum dots light emitting diodes (QLEDs) with emission wavelength of 536nm were demonstrated. The maximum current efficiency and luminance with UV ozone treatment for 3 minutes were 1.66 cd/A and 14623 cd/m², respectively.
15:30	15:45	LEDIA3-4	Photonic Conversion Mediums Based on Polymer Embedded Carbon Dots for Applications in Light Emitting/Solar Energy Harvesting Devices	Corneliu S. Stan, Petronela Horlescu, Catalina A. Peptu Gheorghe Asachi Technical University, Romania	The particular emissive properties of our Carbon Dots with PLQY>80% embedded in polymer matrices are suitable for applications as photonic conversion layers in light emitting devices or increasing the conversion efficiency of solar cells.
15:45	16:15	Break

LEDIA4: Advanced Devices II
Chairs: James S. Speck(UCSB, USA)
Gen-ichi Hatakoshi(Waseda University, Japan)

Room 411+412

Start	End	Session No.	Title	Speaker	Description
16:15	16:45	LEDIA4-1Invited	GaN Monolithic Integration for Lighting and Display	Hoi Wai Choi The University of Hong Kong, Hong Kong	The monolithic integration of optoelectronic and electronic devices on the GaN platform for lighting and display is discussed. Optoelectronic devices include red, green and blue LEDs achieved by strain manipulation, while SB-MOSFETs and BJTs are candidates as electronic devices.
16:45	17:00	LEDIA4-2	Fabrication of 10×10 array structure of micro-LED display using Si micro-cup substrate	Ryosuke Nawa, Takeyoshi Onuma, Tomohiro Yamaguchi, Tohru Honda Kogakuin Univ., Japan	Fabrication of Si micro-cup substrate and its application for a 10×10 array structure of micro-LED display are demostrated to reduction of cross-talk.
17:00	17:15	LEDIA4-3	GaAsP Tunable Single-Mode Semiconductor Laser using Periodically Slotted Structure with Simplified Fabrication Process	Ryuji KatayamaSo Kusumoto, Masahiro Uemukai, Osaka University, Japan	A tunable single-mode laser using a 10-micron-period slotted structure was fabricated by single-step RIE for simultaneous ridge and slotted structure formation. Single-mode lasing with a 1.56 nm tuning range was demonstrated.
17:15	17:45	LEDIA4-4Invited	Nano-Mold & Nano Structured LEDs	Je Won Kim Namseoul University, Korea

April 27 Fri.

LEDIA5: Characterizations
Chairs: Tetsuo Narita(Toyota Central R&D Labs. Inc., Japan)
Jong Kyu Kim(Pohang University of Sci. and Technol., Korea)

Room 411+412

Start	End	Session No.	Title	Speaker	Description
9:15	9:45	LEDIA5-1Invited	Nondestructive Analysis of Threading Dislocations in GaN by Multiphoton-Excitation Photoluminescence	Tomoyuki Tanikawa Institute for Materials Research, Tohoku University, Japan	Threading dislocations in GaN crystals were observed using multiphoton-excitation photoluminescence. Threading dislocations have nonradiative characteristics and they exhibited as dark lines. This method is useful for further investigation on crystal defects in widegap materials.
9:45	10:00	LEDIA5-2	Degradation of Electro-Optical Parameters and Electromigration of Hydrogen in (In)AlGaN-based UVB LEDs	Johannes Glaab¹, Jan Ruschel¹, Tim Kolbe¹, Arne Knauer¹, Jens Rass¹, Neysha Lobo Ploch¹, Markus Weyers¹, Michael Kneissl^{1, 2}, Sven Einfeldt¹ ¹Ferdinand-Braun-Institut, Berlin, Germany, Germany, ²Technische Universitaet Berlin, Berlin, Germany, Germany	Investigations on the degradation of UVB LEDs reveal that the change of the optical power and voltage is accompanied by electromigration of hydrogen from the p-side into the n-side of the device.
10:00	10:15	LEDIA5-3	Microstructure of GaN fin LEDs: Characterization of Structural and Optical Properties by STEM-CL	Gordon Schmidt¹, F. Bertram¹, P. Veit¹, T. Hampel¹, J. Hartmann², F. Steib², H. Zhou², J. Ledig², S. Fündling², H.-H. Wehmann², A. Waag², J. Cristen¹ ¹Otto-von-Guericke-University Magdeburg, Germany, ²Technische Universität Braunschweig, Germany	Using highly spatially resolved cathodoluminescence microscopy, we present the structural and optical properties of an InGaN/GaN core-shell fin grown by metal organic vapor phase epitaxy on GaN/sapphire template covered with a patterned SiO-mask.
10:15	10:30	LEDIA5-4	Spectroscopic Ellipsometry Study on P-Type NiO Films	Mizuki Ono¹, Kohei Sasaki^{2, 3}, Tomohiro Yamaguchi¹, Masataka Higashiwaki³, Akito Kuramata², Shigenobu Yamakoshi², Tohru Honda¹, Takeyoshi Onuma^{1, 3} ¹Kogakuin University, Japan, ²Tamura Corporation, Japan, ³National Institute of Information and Communications Technology, Japan	Impact of thermal annealing in N₂ and O₂ ambient on optical constants in p-type NiO films were studied using spectroscopic ellipsometry. O₂ annealing was found to be preferred to suppress reduction of Ni vacancies.
10:30	11:00	Break

LEDIA6: Growths
Chair: Tomoyuki Tanikawa(Institute for Materials Research, Tohoku University, Japan)

Room 411+412

Start	End	Session No.	Title	Speaker	Description
11:00	11:30	LEDIA6-1Invited	Formation Mechanism of Singular Structure in Alinn Layer Grown on M-GaN substrate by MOVPE	Yuya Inatomi¹, Akira Kusaba¹, Yoshihiro Kangawa^{1, 2, 3}, Kazunobu Kojima⁴, Shigefusa Chichibu^{3, 4} ¹Department of Aeronautics and Astronautics, Kyushu University, Japan, ²RIAM, Kyushu University, Japan, ³IMaSS, Nagoya University, Japan, ⁴IMRAM, Tohoku University, Japan	We performed theoretical analysis to understand formation mechanisms of singular structures observed in AlInN epitaxial layers grown on low defect density m-plane freestanding GaN substrate by metalorganic vapor phase epitaxy (MOVPE).
11:30	11:45	LEDIA6-2	Thermodynamic and Experimental Analyses of Beta-Ga₂O₃ Growth by Ozone Molecular Beam Epitaxy	Natsuki Ueda¹, Yohei Sawada¹, Keita Konishi¹, Yoshiaki Nakata², Masataka Higashiwaki², Yoshinao Kumagai¹ ¹Tokyo University of Agriculture and Technology, Japan, ²National Institute of Information and Communications Technology, Japan	Growth of Ga₂O₃ by ozone molecular beam epitaxy (MBE) was analyzed both thermodynamically and experimentally. Unique growth behavior in the experiment can be explained by thermodynamic analysis considering formation of sub-oxide molecules.
11:45	12:00	LEDIA6-3	Heteroepitaxial Growth of e-Ga₂O₃ Thin Films on c-Plane Sapphire and GaN templates by HVPE	Mayuko Sato, Nao Takekawa, Keita Konishi, Hisashi Murakami, Yoshinao Kumagai Tokyo University of Agriculture and Technology, Japan	Epitaxial e-Ga₂O₃ layers were successfully grown by hydrogen-free HVPE using GaCln and O₂. It was clarified that phase-purity of e-Ga₂O₃ films were improved by decreasing the source zone temperature and increasing O₂ input partial pressure.
12:00	13:00	Break

LEDIA7: Advanced Processes
Chair: Malgorzata Iwinska(UNIPRESS, Poland)
Tomohiro Yamaguchi(Kogakuin University, Japan)

Room 411+412

Start	End	Session No.	Title	Speaker	Description
13:00	13:30	LEDIA7-1Invited	High Purity in HVPE Method as an Advantage Used for Controllable Doping of GaN – Influence of Different Dopants on Electrical, Optical, and Structural Properties of GaN Crystals	Malgorzata Iwinska Institute of High Pressure Physics Polish Academy of Sciences (Unipress), Poland	Gallium nitride crystals were grown by HVPE method on high-quality GaN seeds. Different dopants were investigated in order to obtain highly conductive (Si, Ge) and semi-insulating (Mn, Fe, C) material.
13:30	13:45	LEDIA7-2	Aln Templates for Low Threading Dislocation Density GaN-on-Si: A Solution to Boost the Adoption of GaN-on-Si for LEDs and μLEDs	Fabrice Semond, S. Rennesson, G. Gommé, E. Frayssinet, P. Vennéguès, J. Massies Université Côte d’Azur, CRHEA-CNRS, France	Production of AlN-on-Si templates by MBE for MOCVD growth of low threading dislocation density GaN is presented. These templates simplify growth of GaN-on-Si and would accelerate adoption of GaN-on-Si for the fabrication LEDs and µLEDs.
13:45	14:00	LEDIA7-3	Fabrication of Polarity-Inverted GaN Heterostructure by Surface-Activated Wafer Bonding and Silicon Removal	Takuya Onodera¹, Masahiro Uemukai¹, Kazuya Takahashi², Motoaki Iwaya², Isamu Akasaki², Yusuke Hayashi³, Hideto Miyake³, Maki Kushimoto⁴, Heajeong Cheong⁵, Yoshio Honda⁵, Hiroshi Amano^{4, 5}, Ryuji Katayama¹ ¹Graduate School of Engineering, Osaka University, Japan, ²Faculty of Science and Technology, Meijo Univ., Japan, ³Graduate School of Regional Innovation Studies, Mie Univ., Japan, ⁴Department of Electronics, Nagoya Univ., Japan, ⁵DepartInstitute of Materials and Systems for Sustainability, Nagoya Univ.ment of Electronics, Nagoya Univ., Japan	We succeeded in the fabrication of polarity-inverted GaN heterostructure by utilizing layer transfer process with surface-activated bonding and subsequent removal of the silicon substrate, which is an essential structure for nonlinear optical waveguides.
14:00	14:15	LEDIA7-4	Structural Recovery of Mg-ion-Implanted N-polar Bulk GaN Substrates by High-Temperature Heat Treatment	Sakiko Yamanobe¹, Kento Yoshida¹, Keita Konishi¹, Shinya Takashima², Masaharu Edo², Yoshinao Kumagai¹ ¹Tokyo University of Agriculture and Technology, Japan, ²Fuji Electric Co., Ltd., Japan	High-temperature heat treatment of N-polar bulk GaN substrates with Mg-ion-implantation on their surfaces was investigated. It was found that the structural quality can be recovered by heating at 1300 ℃ without using any capping layer.
14:15	14:30	LEDIA7-5Invited	P-type Conduction of Mg-ion Implanted N-polar GaN and the Optical Investigation	Tetsuo Narita¹, K. Kataoka¹, H. Iguchi¹, K. Shima², K. Kojima², S.F. Chichibu^{2, 3}, M. Kanechika¹, T. Uesugi¹, T. Kachi³ ¹Toyota Central R&D Labs., Inc., Japan, ²IMRAM, Tohoku University, Japan, ³IMaSS, Nagoya University, Japan	We demonstrate p-type conduction by using Mg and hydrogen ion implantation into nitrogen-polar GaN. The optical and electrical properties clearly exhibit the proof of p-type and the existence of point defects due to implantation.
14:30	15:15	Break

LEDIA8: Extended Wavelength Devices
Chairs: Bao-Ping Zhang(Xiamen University, China)
Young-Joo Kim(Yonsei University, Korea)

Room 411+412

Start	End	Session No.	Title	Speaker	Description
15:15	15:45	LEDIA8-1Invited	Arrays of Truncated Cone AlGaN Deep-Ultraviolet Light-Emitting Diodes for Efficient Outcoupling of in-Plane Emission	Jong Kyu Kim POSTECH, Korea	We present 280 nm AlGaN Deep-ultraviolet (DUV) light-emitting diodes (LEDs) having arrays of truncated cone (TC) shaped active mesas with MgF₂/Al reflectors on the inclined sidewalls to effectively extract the intrinsically strong transverse-magnetic (TM) polarized emission.
15:45	16:00	LEDIA8-2	Design of Transverse Quasi-Phase-Matched AlN Waveguide for Deep UV Second Harmonic Generation	Shuhei Yamaguchi¹, Masahiro Uemukai¹, Kazuya Takahashi², Motoaki Iwaya², Isamu Akasaki², Yusuke Hayashi³, Hideto Miyake³, Tomoya Yamada¹, Yasufumi Fujiwara¹, Ryuji Katayama¹ ¹Graduate School of Engineering, Osaka University, Japan, ²Faculty of Science and Technology, Meijo University, Japan, ³Graduate School of Regional Innovation Studies, Mie University, Japan	In order to realize high efficiency deep ultraviolet second harmonic generation, a polarity-inverted multilayer AlN-waveguide-based novel device structure, called as the transverse quasi-phase-matched structure, are proposed and designed based on the numerical simulation.
16:00	16:15	LEDIA8-3	Demonstration of Red Vertical-Microcavity LEDs with Eu-Doped GaN as an Active Layer	Keishi Shiomi, Tomohiro Inaba, Jun Tatebayashi, Yasufumi Fujiwara Osaka University, Japan	We report on the demonstration of electrically-driven red vertical-microcavity light-emitting-diodes (LEDs) with Eu-doped GaN as an active layer cladded by AlInN/GaN and dielectric ZrO₂/SiO₂ distributed Bragg reflectors as bottom and top microcavities, respectively.
16:15	16:45	LEDIA8-4Invited	Fabrication of VCSELs Emitting in the ‘Green Gap’	Bao-Ping Zhang Department of Electronic Engineering, Xiamen University, China	VCSELs emitting in the spectral range from 479.6 nm to 565.7 nm, covering most of the ‘green gap’, are demonstrated. These devices are featured with low threshold current, continuous-wave lasing at room temperature.

LEDIA9: Tutorial Session
Chair: Yoshinao Kumagai(Tokyo University of Agriculture and Technology, Japan)

Room 411+412

Start	End	Session No.	Title	Speaker	Description
16:45	17:30	LEDIA9-1Invited	Modeling and Process Design of III-nitride MOVPE	Yoshihiro Kangawa^{1, 2}, Pawel Kempisty^{2, 3}, Kenji Shiraishi² ¹Kyushu University, Japan, ²Nagoya University, Japan, ³IHPP, PAS, Poland	The knowledge of atomistic-scale phenomena on growth surface is indispensable to optimize the growth conditions of thin films. We developed a physical model for investigating unintentional doping in GaN MOVPE by an ab initio-based approach.
17:30	17:45		Closing Remarks